| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric storage device enabling drive control in which cross talk of information is not caused even if a disturbance voltage is applied to a non-selection capacitor. SOLUTION: Each replica FeRAM unit constituting a replica FeRAM unit group 12 is operated by clock signals having individually different pulse widths based on operation voltage Vcc1 of a FeRAM memory cell group 10, and cross talk in a non-selection capacitor is decided. An optimum pulse width of a clock signal in which cross talk is not caused is recognized from the decided result S1 by a processor 14, optimum voltage Vcc2 of an operation clock signal CK1 of the FeRAM memory cell group 10 is obtained from this recognized optimum pulse width. And after a digital signal indicating the optimum voltage Vcc2 is converted to an analog signal by a D/A converter 18, the operation voltage Vcc1 is converted to optimum voltage Vcc2 by a DC/DC converter 20. COPYRIGHT: (C)2003,JPO
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