| 摘要 |
PROBLEM TO BE SOLVED: To provide the structure of a bipolar junction transistor (BJT) compatible with a process of a vertical MOSFET and to provide a method for processing the same. SOLUTION: The method for processing the bipolar junction transistor comprises the steps of forming at least three layers on a semiconductor substrate, sequentially forming an embedding collector region for the BJT and a source region for the MOSFET, and then forming two windows or trenches on the layer. The first window is formed with the source region, and any of the second window is finished on the surface of the silicon substrate in the embedding collector region. The method further comprises the steps of filling a semiconductor material in both the windows, and forming an emitter to be superposed on a base and a MOSFET drain to be superposed on the channel formed in the window. The second layer of the three layers is a sacrificial layer, and completely removed. The channel is exposed by removing the sacrificial layer, a dielectric layer is grown on the exposed channel region, and then the gate is superposed to complete the formation of the BJT. COPYRIGHT: (C)2003,JPO
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