| 摘要 |
PURPOSE: A semiconductor memory device is provided to screen correctly a parameter by using a test circuit operated according to a clock signal of low frequency. CONSTITUTION: A semiconductor memory device includes a state control portion(10), a burst length control portion(30), a clock buffer portion(20), a burst control signal generation portion(60), a burst end control portion(40), and a precharge control portion(50). The state control portion receives external control signals and outputs internal commands. The burst length control portion maintains an active state of a column operation corresponding to the length of burst according to the internal commands. The clock buffer portion generates a pulse clock signal and an inverse clock signal. The burst control signal generation portion receives a burst control signal and generates an inverse burst control signal and a test mode burst control signal. The burst end control portion generates a burst end signal to indicate a burst end time point. The precharge control portion performs a precharge operation according to the burst end signal.
|
