| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor substrate which can polish a metallic film at a high speed with a low load with use of a polishing pad having a smooth surface and can suppress occurrence of such a fault on the polished surface as scratch or dishing in a step of polishing the metallic film formed on the substrate using the polishing pad. <P>SOLUTION: In the method for manufacturing a semiconductor substrate, an etching rate is less than 10 nm/min., a polishing rate at a load of 10 KPa is 200 nm/min. or more, a metal polishing solution having a contrast as a ratio of 20 or more between the polishing rate and the etching rate is used, a substrate is polished with a load of 15 KPa or less with use of a polishing pad having a polishing pad surface with an average surface roughness Ra of 1000 nm or less. <P>COPYRIGHT: (C)2003,JPO |
