发明名称 SUBSTRATE TREATING APPARATUS
摘要 PROBLEM TO BE SOLVED: To improve the throughput of a substrate treating apparatus and, in addition, to prevent occupancy of treatment chambers. SOLUTION: A substrate W is transferred between a plasma ashing chamber and first to third liquid-phase treatment chambers in prescribed order by means of a processor robot. In each treatment chamber, a chemical is supplied to a chemical spray nozzle 122 and is further supplied to the surface of the substrate W from the nozzle 122, after the chemical is ultrasonically vibrated by means of an ultrasonic diaphragm 136. When the chemical is supplied to the substrate W, the substrate W is rotated while the substrate W is held by a spin chuck 120. Since the substrate W is transferred between the plasma ashing chamber and first to third liquid-phase treatment chambers in the prescribed order, the throughput of the substrate treating apparatus is not controlled by the rate-determining treatment. In addition, since the chemical is supplied to the substrate W in an ultrasonically vibrated state, the throughput speed of liquid-phase cleaning is improved. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003179117(A) 申请公布日期 2003.06.27
申请号 JP20020221244 申请日期 2002.07.30
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 MIZOHATA YASUHIRO;KOYAMA YOSHIHIRO;HIRAE SADAO
分类号 H01L21/677;H01L21/027;H01L21/304;H01L21/306;H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/677
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