| 摘要 |
PURPOSE: A method for manufacturing an interlayer dielectric containing fluorine of a multilayer metal line is provided to be capable of preventing the delamination phenomenon due to the diffusion of fluorine when carrying out the following heat treatment by controlling the fluorine content of the interlayer dielectric using an optimized process condition. CONSTITUTION: After forming a lower metal line(14) at the upper portion of a semiconductor substrate(10), an interlayer dielectric(16a) containing fluorine of 3.0-3.8% on the resultant structure. After forming a via hole on the resultant structure for exposing the lower metal line, an upper metal line(18) is connected with the lower metal line. Preferably, the interlayer dielectric is formed by supplying SiH4 of 50-90 sccm, O2 of 120-200 sccm, Ar of 30-100 sccm, and SiF4 of 30-80 sccm. Preferably, the interlayer dielectric is formed by using power of 2000-4000 Watt, gas pressure of 2.5-7 Torr, depositing pressure of 1-5 Torr, depositing temperature of 380-450°C, ESC(Electro-Static Chuck) voltage of 600-1200V.
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