| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film transistor capable of obtaining an indication element, transparent and capable of transmitting light, further, having less opaque part in the unit of a picture element, capable of miniaturizing the unit of the picture element to the minimum size of a transistor, simple in a manufacturing process, bright and reduced in power consumption, and an indication element equipped with the thin film transistor. <P>SOLUTION: The thin film transistor and the indication element equipped therewith are provided on the transparent substrate 20 with a transparent semiconductor layer 26 including more than one element selected from Al, Ga, In, nitrogen and hydrogen, a transparent source electrode 28 as well as a transparent drain electrode 30 which are constituted so that at least one part of each electrode is contacted with the transparent semiconductor layer 26, and a transparent gate electrode 22. <P>COPYRIGHT: (C)2003,JPO</p> |
