| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming an insulation film having a low content of N-H bond. SOLUTION: Hexamethyldisilazane gas, ammonia gas, and Argon gas are supplied into a chamber 12 in a vacuum, and a thin film of SiCN is formed with a thickness of about 1 to 10 nm on a surface of a wafer W. Subsequently, a pressure is reduced and the wafer W is heated while Argon gas is supplied. The annealing treatment excites the N-H bond in the thin film and dissociation removes H from the film. The formation of the thin film and the annealing treatment are repeated so as to form an SiCN film with a predetermined thickness. COPYRIGHT: (C)2003,JPO
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