SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to be capable of previously restraining the generation of step difference due to the structure of a gate pattern by stably burying a trench type gate pattern in a silicon substrate. CONSTITUTION: A trench type gate pattern(12) is buried in a substrate(11). The bottom portion and both sides of the trench type gate pattern(12) are enclosed by a gate oxide layer(13). A source and drain diffusing layer(15,16) are located and spaced apart from both sides of the trench type gate pattern(12) in the substrate(11). A plurality of isolation layers(17) are located and spaced apart from the source and drain diffusing layer(15,16), respectively.