| 摘要 |
PURPOSE: A method for forming a fine-pattern is provided to be capable of reducing the influence due to the step difference of an interlayer dielectric by using a single damascene process. CONSTITUTION: A storage electrode(4), a dielectric layer(2) and a plate electrode(3) are sequentially formed at a center region(II) of a semiconductor substrate(1). After depositing an interlayer dielectric(6) on the entire surface of the resultant structure, a contact hole(5a) is formed at a peripheral region(I) of the semiconductor substrate by carrying out an etching process. Then, a contact plug(5) is formed in the contact hole. After sequentially forming a conductive layer and a photoresist layer on the resultant structure, a photoresist pattern is formed by using a binary mask. The conductive layer is partially exposed to excimer laser beam by using the photoresist pattern as a mask. Then, a conductive line(9a) is formed by reacting the unexposed portion of the conductive layer with a developing solution.
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