METHOD FOR FORMING CONTACT HOLE

摘要

PURPOSE: A method for forming a contact hole is provided to be capable of preventing the misalignment between a contact hole and a gate, and the contact hole and an isolation layer by forming a dummy pattern on the isolation layer while forming a gate. CONSTITUTION: An isolation layer(202) is formed in a semiconductor substrate(200). A polycrystalline silicon layer and the first silicon nitride layer are sequentially formed on the semiconductor substrate. A gate(a) and a dummy pattern(b) are simultaneously formed on the predetermined portions of the semiconductor substrate by selectively etching the first silicon nitride layer and polycrystalline silicon layer using a photolithography process. An insulating spacer(209) is formed at both sidewalls of the gate and dummy pattern. After depositing an insulating layer(210) on the resultant structure, a contact hole(211) is formed by selectively etching the insulating layer.