发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <p><P>PROBLEM TO BE SOLVED: To enable sharing a row decoder decoding an address of a bock being an object of write-in and erasure of data by a plurality of memory cell arrays, in a NAND type EEPROM. <P>SOLUTION: For example, a block address signal ARi indicating a selection block is decoded by a row pre-decoder 23. Then the decoded output (pre-decode signal AROWAi, Bi, Ci, Di, Ei) is decoded by a row decoder 24, and made a block selection signal BLKDECi. This block selection signal BLKDECi is sent to block latch circuit 12a, 12b respectively. Thus, selection of a block corresponding to the block address signal ARi is performed for each memory cell array 11a, 11b. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003178590(A) 申请公布日期 2003.06.27
申请号 JP20010377499 申请日期 2001.12.11
申请人 TOSHIBA CORP 发明人 YAMAMURA TOSHIO
分类号 G11C16/02;G11C16/06;(IPC1-7):G11C16/02 主分类号 G11C16/02
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