| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability of a gate electrode by reducing the possibility of a gate electrode disconnection at a stepwise part depending upon a mesa structure by modifying extremely simple structure and method. SOLUTION: The compound semiconductor device comprises a mesa structure in which a buffer layer 2 formed on a substrate and externally flatly spreading from a mesa structure installing region, and a cap layer 6 rising from the mesa structure installing region on the buffer layer 2, containing a semiconductor layer having the same etching resistance as that of the buffer layer 2 or constituted of the semiconductor layer itself and having an etching stop layer 5 arranged on a substrate and laminated on the uppermost layer, and a gate electrode 10 spreading on the buffer layer 2 flatly spreading from a recess 6A formed on the cap layer 6 via the mesa structure side face. COPYRIGHT: (C)2003,JPO
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