发明名称 |
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method which can suppress a temperature fluctuation of a chemical solution and obtain the sure reproducibility of the processing. SOLUTION: This substrate processing apparatus 1 has a processing bath 12 in which an anode formation processing is carried out and tank 42 in which anode formation solution supplied to the processing bath 12 is stored. The processing bath 12 and the tank 42 are connected to each other via a supply pipe 47 and a drain pipe 57. The anode formation solution is circulated via the processing bath 12 before or while a glass substrate G is subjected to the anode formation processing. With such an arrangement, the temperature rise of the anode formation solution can be suppressed and the reproducibility of the anode formation processing can be surely obtained. COPYRIGHT: (C)2003,JPO
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申请公布号 |
JP2003179024(A) |
申请公布日期 |
2003.06.27 |
申请号 |
JP20010379709 |
申请日期 |
2001.12.13 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
YAGI YASUSHI;AOKI KAZUJI;USHIJIMA MITSURU |
分类号 |
C25D11/32;C25D17/00;H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
C25D11/32 |
代理机构 |
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代理人 |
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地址 |
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