| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of easily forming a barrier metal and a glue layer on the corner portion of a contact hole or a via hole by supplying electric and magnetic field. CONSTITUTION: A barrier metal(20) or a glue layer is formed on the inner wall and bottom portion of a contact or via hole(10) in the state of supplying electric and magnetic field, wherein the electric and magnetic field intersect with each other. Preferably, the barrier metal(20) is formed by carrying out a CVD(Chemical Vapor Deposition) or PVD(Physical Vapor Deposition) using one selected from a group consisting of TiN, Ti, and TiW. Preferably, a Ti layer is used as the glue layer. Preferably, the electric field is supplied toward the vertical direction of the surface of a wafer, and the magnetic field is supplied toward the horizontal direction of the surface of the wafer.
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