| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the distribution of the orientation of an a axis in a C plane by suppressing the occurrence of a crack upon a nitride semiconductor being epitaxially grown on a Si substrate. <P>SOLUTION: Nitrogen is supplied as carrier gas at 659°C and 100 Torr to a stepped Si substrate comprising a periodical recessed stripe, and TMI, TMA, and ammonia are supplied to bring a V/III ratio to 70000. Further, when an AlInN layer with the film thickness of about 30 nm is deposited, and then hydrogen at 1060°C is supplied as carrier gas, and TMG and ammonia are supplied such that the V/III ratio is 8000, there is obtained without the occurrence of any crack, a flat GaN layer having an air gap upward of the recessed section and including a principal surface comprising only the surface C. <P>COPYRIGHT: (C)2003,JPO |
