发明名称 CHARGED-PARTICLE-BEAM EXPOSURE SYSTEM AND CALIBRATION METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a calibration method for a charged-particle-beam exposure system capable of reducing time needed to calibrate the optics system. SOLUTION: In conducting calibration of the beam, the deflection center of the electron optics system is positioned at the center of the group of sub- fields 66-1 to 66-20, the sub-fields 66-1 to 66-20 are sequentially scanned by the beam, and the beam property is measured at each position. Then, the deflection center of the electron optics system is positioned at the center of the group of the sub-fields 66-21 to 66-40, by moving the reticle stage and the wafer stage. By keeping this positional relation, the sub-fields 66-21 to 66-40 are sequentially scanned by the beam, and the beam property is measured at each position. Based on the above measurements, calibration factors on the optics system for each sub-field 66 are set, and the calibrations on the electron optics system (for example, deflection position error, image magnification, image rotation, etc.), are conducted. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003178967(A) 申请公布日期 2003.06.27
申请号 JP20020288238 申请日期 2002.10.01
申请人 NIKON CORP 发明人 HIRAYANAGI NORIYUKI
分类号 G03F7/20;H01J37/147;H01J37/20;H01J37/305;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
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