发明名称 SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory device having first and second memory architectures with different structures as memory architectures being able to constitute and in which either of the first and the second memory architectures can be selected by option processing, and a memory system utilizing the device. SOLUTION: The first memory architecture has (p) banks, and has a page size of m/2 bytes of m/2 memory cells connected to one word line in each of the banks, and n/2 data terminals DQ. The second memory architecture has (p) banks, and has a page size of (m) bytes and (n) data terminals DQ. The option processing is performed by bonding, a mask pattern, or a fuse. Therefore, in this semiconductor memory device, redundant flexibility can be improved, while power consumption can be reduced by adjusting the page size and the number of banks by a design option. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003178580(A) 申请公布日期 2003.06.27
申请号 JP20020308272 申请日期 2002.10.23
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KYUNG KYE-HYUN;BUN HEISHOKU
分类号 G06F12/06;G06F12/00;G11C7/10;G11C11/401;G11C29/04;(IPC1-7):G11C11/401;G11C29/00 主分类号 G06F12/06
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