| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory in which non-destruction read-out can be performed and high integration can be contrived by making the ferroelectric memory minute further. SOLUTION: A switch circuit 18 separating a bit line for write-in is provided between memory cell blocks 15 and 16, while a switch circuit 19 separating a bit line for write-in is provided between memory cell blocks 16 and 17, and at the time of read-out, the switch circuits 18, 19 are controlled so that a bit line for write-in in the memory cell block comprising the selected memory cell is separated from a bit line for write-in in the other memory cell block and made to be a floating state. COPYRIGHT: (C)2003,JPO
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