| 摘要 |
PURPOSE: A pinned photodiode in an image sensor is provided to be capable of improving attenuation of blue color by forming partially a p0 region used as a pinning layer on an n- region. CONSTITUTION: A pinned photodiode of an image sensor comprises a p-type semiconductor layer(1), an n- region(3) and a p0 region(4). The n- region(3) is formed in the p-type semiconductor layer(1). The p0 region(4) is formed on the n- region(3). At this time, the p0 region(4) is partially formed on the n- region(3) instead of the entire surface of the n- region, thereby reducing potential barrier and using as a pinning layer.
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