发明名称 CHEMICALLY AMPLIFIED RESIST MATERIAL AND PATTERNING PROCESS
摘要 <P>PROBLEM TO BE SOLVED: To provide a chemically amplified resist material sensitive to a high energy ray and excellent in sensitivity and transparency at &le;200 nm, particularly &le;170 nm wavelength. <P>SOLUTION: The chemically amplified resist material comprises (A) a high molecular compound having a repeating unit containing at least one fluorine atom, (B) a compound of formula (1) (where R<SP>1</SP>and R<SP>2</SP>are each H, F, alkyl or fluoroalkyl, at least one of R<SP>1</SP>and R<SP>2</SP>contains F; R<SP>3</SP>is a single bond or alkylene; R<SP>4</SP>is a 4-40C n-valent organic group having at least one aromatic ring or diene ring; R<SP>5</SP>is H or C(=O)R<SP>6</SP>; R<SP>6</SP>is H or CH<SB>3</SB>; and n is 2, 3 or 4), (C) an organic solvent and (D) an acid generator. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003177539(A) 申请公布日期 2003.06.27
申请号 JP20020276743 申请日期 2002.09.24
申请人 SHIN ETSU CHEM CO LTD;MATSUSHITA ELECTRIC IND CO LTD;CENTRAL GLASS CO LTD 发明人 HATAKEYAMA JUN;HARADA YUJI;KAWAI YOSHIO;SASAKO MASARU;ENDO MASATAKA;KISHIMURA SHINJI;OTANI MITSUTAKA;KOMORIYA HARUHIKO;MAEDA KAZUHIKO
分类号 G03F7/039;C08F214/18;C08F220/00;C08F220/22;C08F234/00;G03F7/004;H01L21/027 主分类号 G03F7/039
代理机构 代理人
主权项
地址