发明名称 METAL OXIDE SEMICONDUCTOR THIN FILM AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To find a semiconductor manufacturing method of quickly, cheaply and massively manufacturing a semiconductor having a large area, as attention is given in the aspects of reducing an environmental load and providing clean generation or energy saving to the technology for manufacturing solar cells, light emitting elements and other certain kinds of semiconductor devices each having a large area and a low cost. <P>SOLUTION: The method of manufacturing a semiconductor thin film comprises a step of coating a substrate with organic molecules containing both anion atoms an cation atoms of a semiconductor as constituent components by various methods such as spraying, dipping, spin coating and evaporating, and heating to react them, resulting in p-type and n-type semiconductors with a p-n junction formed therebetween. Thus, semiconductor devices, light emitting elements or solar cells having large areas can be quickly and massively manufactured at low costs. The substrate may use metal, ceramic, glass, heat-resistive plastic, and other possible substances durable at sintering temperatures, and semiconductor devices, light emitting elements or solar cells can be directly assembled on possible constructions such as roofs, walls, etc., possible structures such as cars and aircraft, or other possible substances. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003179242(A) 申请公布日期 2003.06.27
申请号 JP20010378118 申请日期 2001.12.12
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 IWATA HIROYA
分类号 H01L21/365;H01L21/16;H01L21/368;H01L31/0296;H01L31/04;H01L31/18;H01L33/28 主分类号 H01L21/365
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