| 摘要 |
PROBLEM TO BE SOLVED: To prevent the punch through of boron to a silicon substrate that is generated in the activation RTA treatment of a transistor without increasing the number of processes. SOLUTION: In the semiconductor device, at least one of an offset film 14 formed on a gate electrode 13, a sidewall film 15 formed at the sidewall section of the gate electrode 13, and an etching stopper film 18 used when forming a connection hole 22 for connecting a wiring layer that is not illustrated and a silicon substrate 11 is formed by a silicon nitride film. For the amount of combination hydrogen in the silicon nitride film, when the amount is determined by a peak area value obtained from an infrared absorption spectrum, the peak area ratio of Si-H combination to Si-N bonding is preferably 0.3% or less. In addition, for the nitride silicon film, the ratio of nitride to silicon is preferably 1:1 or more and 1:3 or less. Further, the nitride silicon film is preferably formed at a film-forming temperature of 200°C or more and 600°C or less. COPYRIGHT: (C)2003,JPO
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