| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can increase a storage data value per bit and to provide a method of manufacturing the semiconductor memory device. SOLUTION: The semiconductor memory device is provided with a plurality of memory elements 16, 21 which are laminated on one cell in such a way that directions of their easy axes of magnetization 16a, 21a are directed to mutually different directions and a first interconnection 13 and a second interconnection 21 which sandwich the plurality of memory elements 16, 21 and which are extended to mutually different directions. COPYRIGHT: (C)2003,JPO
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