| 摘要 |
PROBLEM TO BE SOLVED: To realize an inductor element whose inductance is variable in a semiconductor device. SOLUTION: A spiral wiring of an inductor is formed by a P-type diffusion layer 5 in an N-type well 3, which is an N-type diffusion layer formed on a silicon substrate 1. A voltage is applied to the N-type well 3 for reverse biase of the P-N junction. By controlling the voltage, the width of the P-type diffusion layer 5 forming the spiral wiring is changed by a depletion layer, and the inductance due to the spiral wiring can be changed. COPYRIGHT: (C)2003,JPO
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