| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can assure flatness of the ground surface. SOLUTION: A groove pattern 13 is formed to an insulation film 12 and an island pattern 14, almost in the same height as the insulation layer 12, consisting of the same insulation layer 12 is formed within the groove pattern 13 in the predetermined interval by etching the insulation layer 12. A conductive layer 15 is formed on the insulation layer 12 under the condition of embedding the inside of groove pattern 13. The conductive layer 15 is ground with the chemical-mechanical grinding method until the insulation layer 12 is exposed to form an embedded wiring 15 consisting of the conductive layer 15 within the groove pattern 13. Accordingly, the conductive layer 15 is chemically and mechanically ground under the condition that the aperture width of groove pattern 14 is partially narrowed to form an embedded wiring 16 in which the dishing phenomenon. COPYRIGHT: (C)2003,JPO
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