INSULATING FILM-FORMING METHOD, AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To achieve a reliable high-k film having superb insulating characteristics. SOLUTION: After a metal hafnium layer 12 is formed on a silicon substrate 10, the surface of the silicon substrate 10 and the metal hafnium layer 12 are oxidized, thus forming a silicon oxide film 14 containing Hf set to be a high-k film on the surface of the silicon substrate 10. COPYRIGHT: (C)2003,JPO