| 摘要 |
PROBLEM TO BE SOLVED: To precisely control the thickness of a paint film on a semiconductor corresponding to deformation or the like in a tray for placing a semiconductor substrate in a normal-pressure CVD apparatus. SOLUTION: The normal-pressure CVD apparatus has a carrier device. The carrier device has a plurality of trays 2 that are connected one another. On the tray 2, a semiconductor substrate 1 is placed. In the path of the carrier device, a process gas head 3 is provided. From the process gas head 3, a process gas is supplied to the semiconductor substrate 1 on the tray 2. In the path of the carrier device, a sensor apparatus 5 is provided at the upstream side of the process gas head 3. The sensor apparatus 5 measures a position in the vertical direction of the surface of the tray 2 on which the semiconductor substrate 1 is placed, and at the same time sends a signal for indicating the position to a controller 9. The controller 9 adjusts the activation of the head 3 based on the signal, and controls the thickness of a paint film on the semiconductor substrate 1. COPYRIGHT: (C)2003,JPO
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