| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability in a semiconductor integrated circuit apparatus having a conductor film pattern using aluminum as a main constituent. SOLUTION: After first-layer wiring L1 having a conductor film 16d using aluminum as a main constituent is subjected to patterning by a dry etching method, a sidewall protection film 18 of the machining sidewall and a photoresist pattern 17a used as an etching mask are removed by plasma ashing treatment. Then, a chlorine constituent adhering to an insulating film 15b and the surface of the first-layer wiring L1 is removed by the plasma ashing treatment using the mixed gas of an oxygen gas and a methanol gas. At this point, the plasma ashing treatment is made so that temperature on the main surface of a wafer becomes relatively low in the ashing removal treatment of a photoresist pattern 17a or the like, and the plasma ashing treatment is carried out so that the temperature on the main surface of the wafer becomes relatively high in the removal treatment of the chlorine constituent. Additionally, the plasma ashing treatment is performed in a separate treatment chamber. COPYRIGHT: (C)2003,JPO
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