发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce variations in polishing when polishing a projection formed on a semiconductor substrate by a CMP method. SOLUTION: The manufacturing method of a semiconductor device is a process in case where a projection 5 formed on a semiconductor substrate 1 is polished by the CMP method for performing planarization processing. The process is set to be the preprocess of the CMP process. In the process, the projection 5 is subjected to chemical dry etching treatment with a photoresist film 6 having an opening 7 on the projection 5 as a mask, and the periphery section including the projection 5 is subjected to planarization in advance. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003179033(A) 申请公布日期 2003.06.27
申请号 JP20010377137 申请日期 2001.12.11
申请人 SANYO ELECTRIC CO LTD 发明人 MITSUSAKA EIICHI;SAITO KIMIHIDE
分类号 C23F1/00;C23F1/04;H01L21/302;H01L21/304;H01L21/3065;H01L21/3205;H01L21/76;(IPC1-7):H01L21/306;H01L21/320 主分类号 C23F1/00
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