| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing the bridge phenomenon of a metal line formed on the upper portion of an interlayer dielectric though scratches are generated on the interlayer dielectric due to a CMP(Chemical Mechanical Polishing) process by coating an SOG(Spin On Glass) layer on the scratches and adding an oxide layer. CONSTITUTION: After forming lower metal lines(31,33) on a semiconductor substrate(10), an interlayer dielectric(40) is flatly formed on the resultant structure. A insulating layer made of an SOG(Spin On Glass) layer(80) and a protecting layer(90) is formed on the resultant structure for filling scratches of the interlayer dielectric. A contact hole(91) is formed by selectively etching the resultant structure for exposing the metal line(31). After filling the contact hole with a tungsten plug(60), upper metal lines(71,73) are formed on the resultant structure.
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