METHOD FOR MANUFACTURING ULTRA-FINE MOSFET DEVICE

摘要

PURPOSE: A method for manufacturing an ultra-fine MOSFET(Metal Oxide Semiconductor Field Effect Transistor) device is provided to be capable of improving the lifetime and reliability of the device by using a reverse-T shaped gate and the second spacer. CONSTITUTION: After sequentially forming a gate oxide layer(12), a gate conductive layer, and a capping oxide layer(14) on a semiconductor substrate(11), the capping oxide layer and gate conductive layer are selectively etched. At this time, the gate conductive layer thinly remains on the entire surface of the gate oxide layer. The first spacer(15) is formed at both sidewalls of the etched capping oxide layer and gate conductive layer. A reverse-T shaped gate electrode(20) is formed by partially removing the remaining gate conductive layer. The second spacer(18) is formed at both sidewalls of the gate electrode. Junction regions(19) are then formed at both sides of the gate electrode in the semiconductor substrate.