| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the cost of a gallium nitride compound semiconductor light emitting element and to reduce an operation voltage. <P>SOLUTION: A buffer layer 2 including phosphorous, which functions as n-type impurity on silicon, is formed on an n-type conductive silicon semiconductor substrate where n-type impurity is doped. A light emitting function semiconductor region 3 including a gallium semiconductor layer is disposed on the buffer layer 2. An anode electrode 4 is disposed on the upper face of the semiconductor region 3 and a cathode electrode 5 is disposed on the lower face of the substrate 1. An inversion layer in the silicon substrate is prevented from being formed by phosphorous. <P>COPYRIGHT: (C)2003,JPO |
