| 摘要 |
PROBLEM TO BE SOLVED: To reduce an amount of warpage of a wafer which is produced when only one side of the wafer is ground, for instance in the case of a vertical semiconductor device. SOLUTION: One side surface of a wafer is instantaneously heated by, for instance, a halogen lamp to recover a process deterioration layer. It is important that the emission of the halogen lamp is not longer than 10 sec. and the final temperature is not higher than 600°C to avoid harmful influences upon devices on the surface side. COPYRIGHT: (C)2003,JPO
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