SEMICONDUCTOR CRYSTAL AND METHOD FOR MANUFACTURING IT

摘要

PROBLEM TO BE SOLVED: To provide an effective structure and a method for manufacturing it in manufacturing a crystal having a lattice constant different from that of that of Si on an Si substrate. SOLUTION: A buffer layer comprising a IV group element is formed on a porous Si, on which a crystal layer having a lattice constant different from that of an Si single crystal is deposited. COPYRIGHT: (C)2003,JPO