发明名称 DRY ETCHING METHOD
摘要 PROBLEM TO BE SOLVED: To inhibit deposition of a reaction product that is generated in dry etching, and to carry out etching with high machining accuracy. SOLUTION: The dry etching method includes a mounting process for mounting a material A to be etched onto the lower electrode of a vacuum treatment chamber 20a having upper and lower electrodes 21 and 23, a heating process for heating the inside of the vacuum treatment chamber and the upper and lower electrodes, and a dry etching treatment process for carrying out dry etching treatment to the material to be etched. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003179038(A) 申请公布日期 2003.06.27
申请号 JP20020364842 申请日期 2002.12.17
申请人 OKI ELECTRIC IND CO LTD;MIYAZAKI OKI ELECTRIC CO LTD 发明人 INUI HIDENORI
分类号 H01L21/66;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/66
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