METHOD AND SYSTEM FOR FORMING GATE ELECTRODE HAVING TWO WORK FUNCTIONS IN SEMICONDUCTOR GATE

摘要

PROBLEM TO BE SOLVED: To give two work functions upon forming a gate electrode, in a semiconductor gate and to require adjustment of the value of one of the work functions. SOLUTION: In a semiconductor device of a structure including a substrate, a dielectric layer, a metal layer, a silicon-germanium layer, a first part of the silicon-germanium layer is removed to expose a first part of a metal layer, and a second part of the silicon-germanium layer is left behind on a second part of the metal layer. A first gate electrode including the first part of the metal layer and a second gate electrode including a silicon-germanium metal composition formed with a second part of the silicon-germanium layer and the second part of the metal layer are formed. It is possible to give two work functions to a gate electrode by adjusting the latter work function. COPYRIGHT: (C)2003,JPO