发明名称 Non-volatile semiconductor memory and method of operating the same
摘要 A method of writing data into a non-volatile semiconductor memory having a plurality of memory cells in which a word line is shared by memory cells and a bit line is shared by adjacent memory cells, the method including writing the data into memory cells connected to the same word line sequentially from a memory cell at one end to a memory cell at another end.
申请公布号 US2003117845(A1) 申请公布日期 2003.06.26
申请号 US20020315095 申请日期 2002.12.10
申请人 YAMAUCHI YOSHIMITSU 发明人 YAMAUCHI YOSHIMITSU
分类号 G11C16/02;G11C16/00;G11C16/04;G11C16/06;G11C16/10;G11C16/34;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C5/06;G11C11/34 主分类号 G11C16/02
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