发明名称 |
NROM NOR array |
摘要 |
A NOR array includes a first plurality of word lines, a second plurality of bit lines and a third plurality of common lines. Each word line connects to the gates of a row of nitride read only memory (NROM) cells. Each bit line connects to one diffusion area of each NROM cell in a column of the NROM cells and each common line connects to the other diffusion areas of each NROM cell in a row of the NROM cells.
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申请公布号 |
US2003117861(A1) |
申请公布日期 |
2003.06.26 |
申请号 |
US20010023469 |
申请日期 |
2001.12.20 |
申请人 |
MAAYAN EDUARDO;EITAN BOAZ |
发明人 |
MAAYAN EDUARDO;EITAN BOAZ |
分类号 |
G11C7/18;G11C16/04;G11C16/10;G11C16/26;(IPC1-7):G11C7/00 |
主分类号 |
G11C7/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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