| 发明名称 |
OFET used e.g. in RFID tag, comprises an intermediate layer on an active semiconductor layer |
| 摘要 |
Organic Field Effect Transistor comprises an intermediate layer on an active semiconductor layer (6). The intermediate layer shifts the threshold voltage of the OFET by forming a space charge zone in the active layer.
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| 申请公布号 |
DE10160732(A1) |
申请公布日期 |
2003.06.26 |
| 申请号 |
DE20011060732 |
申请日期 |
2001.12.11 |
| 申请人 |
SIEMENS AG |
发明人 |
FIX, WALTER;ULLMANN, ANDREAS |
| 分类号 |
H01L51/05;H01L29/772;H01L29/78;H01L29/786;H01L35/24;H01L51/00;H01L51/10;H01L51/30;(IPC1-7):H01L51/20 |
主分类号 |
H01L51/05 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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