发明名称 |
High-frequency signal amplification device and method for manufacturing the same |
摘要 |
The present invention provides a high-frequency signal amplification device, in which insufficient isolation is compensated and which is made smaller, as well as a method for manufacturing the same. A substrate, in which a plurality of metal conductors arranged between the plurality of dielectric layers and/or at a surface of the dielectric multilayer substrate are exposed at a first region of the surface, and a metal surface that is arranged at a position lower than the plurality of metal conductors is exposed from a remaining portion of the first region not including the region on which the plurality of metal conductors are arranged, is used as a dielectric multilayer substrate. The semiconductor element is mounted in the first region such that a high-frequency signal is input into the semiconductor element via at least one of the plurality of metal conductors, and an amplified high-frequency signal is output from the semiconductor element via at least another one of the plurality of metal conductors.
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申请公布号 |
US2003116844(A1) |
申请公布日期 |
2003.06.26 |
申请号 |
US20020309595 |
申请日期 |
2002.12.03 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TATEOKA KAZUKI;YOSHIKAWA NORIYUKI;KANAZAWA KUNIHIKO |
分类号 |
H05K3/46;H01L23/12;H01L23/66;H03F1/08;H03F3/60;(IPC1-7):H05K7/06 |
主分类号 |
H05K3/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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