发明名称 |
Method of manufacturing semiconductor devices |
摘要 |
A method of manufacturing a semiconductor device is disclosed. The method includes depositing an O3-TEOS oxide film having a good flow-like property under a high adhesive force in order to prevent degradation in the characteristic of the surface of a lower insulating film made of a PE-TEOS oxide film and generation of defect due to the topology difference. Therefore, the disclosed method can improve the electrical characteristic of a semiconductor device and the manufacturing yield.
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申请公布号 |
US2003119302(A1) |
申请公布日期 |
2003.06.26 |
申请号 |
US20020306335 |
申请日期 |
2002.11.27 |
申请人 |
YOO KYONG SIK;PARK SUNG KI |
发明人 |
YOO KYONG SIK;PARK SUNG KI |
分类号 |
H01L21/316;H01L21/02;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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