| 摘要 |
A method of etching a semiconductor material by first selecting a substrate material. Next, patterning a mask layer onto the substrate. The substrate material over which the mask layer does not appear is then etched for a user-definable time. Any polymer that builds up on the sidewalls of the substrate material being etched is removed. If the substrate material has been etched and cleaned at least twice then stop. Otherwise, return to the substrate etch step for additional processing. The present invention performs a cleaning step to remove polymer that builds up on the sidewalls of the desired structure after etching only a portion of the desired depth of the resulting structure. Therefore, no polymer is allowed to build up and affect the verticality of the resulting structure.
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