High voltage vertical conduction power MOSFET device, has diffusions uniformly distributed into surface of epitaxial layer with greater impurity concentration to define p-n junctions

摘要

The power MOSFET device has two layers of epitaxial silicon with different concentration impurities. Several diffusions of conductive type opposing the epitaxial layer with greater impurity concentration are uniformly distributed into the surface of the epitaxial layer with greater impurity concentration to define p-n junctions. The epitaxial layer with lower impurity concentration is formed on top of the surface of a silicon substrate. Impurities of n or p conductivity type are uniformly distributed throughout the volume of the epitaxial layer on top of the silicon substrate. The other epitaxial layer is formed on the epitaxial layer on the silicon substrate.