Semiconductor device and method of checking semiconductor storage device

摘要

It is an object to obtain a semiconductor device having a circuit for CBCM (Charge Based Capacitance Measurement) which can measure a capacitance value with high precision. An MOS transistor constituting a circuit for CBCM has the following structure. More specifically, source-drain regions (4) and (4') are selectively formed in a surface of a body region (16), and extension regions (5) and (5') are extended from tip portions of the source-drain regions (4) and (4') opposed to each other, respectively. A gate insulating film 7 is formed between the source-drain regions (4) and (4') including the extension regions (5) and (5') and a gate electrode (8) is formed on the gate insulating film (7). A region corresponding to a pocket region 6 (6') in a conventional structure having a higher impurity concentration than that of a channel region is not formed in a tip portion of the extension region 5 (5') and a peripheral portion of the extension region (5).