| 发明名称 |
Semiconductor device and its production method |
| 摘要 |
A method for producing a semiconductor device which comprises causing a dopant present in a semiconductor substrate to segregate in the surface of said semiconductor substrate, thereby forming a thin layer which has a higher dopant concentration than said substrate. The thin layer formed by segregation prevents punch-through which occurs as the result of miniaturization of MOSFET. This method permits economical delta doping without sacrificing the device characteristics.
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| 申请公布号 |
US2003119247(A1) |
申请公布日期 |
2003.06.26 |
| 申请号 |
US20020194253 |
申请日期 |
2002.07.15 |
| 申请人 |
SUWA YUJI;HASHIZUME TOMIHIRO;YAMAGUCHI KEN;FUJIMORI MASAAKI |
发明人 |
SUWA YUJI;HASHIZUME TOMIHIRO;YAMAGUCHI KEN;FUJIMORI MASAAKI |
| 分类号 |
H01L21/22;H01L21/225;H01L21/30;H01L21/336;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L29/10;H01L29/78;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/22 |
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