发明名称 |
Silicon single crystal wafer and method for producing silicon single crystal |
摘要 |
There can be provided a silicon single crystal wafer grown according to Czochralski method wherein the whole plane of the wafer is occupied by N region on the outside of OSF generated in a shape of a ring by thermal oxidation treatment and there exists no defect region detected by Cu deposition. Thereby, there can be produced a silicon single crystal wafer according to CZ method, which does not belong to any of V region rich in vacancies, OSF region and I region rich in interstitial silicons, and can surely improve electric characteristics such as oxide dielectric breakdown voltage characteristics or the like under stable manufacture conditions.
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申请公布号 |
US2003116082(A1) |
申请公布日期 |
2003.06.26 |
申请号 |
US20020204935 |
申请日期 |
2002.08.27 |
申请人 |
SAKURADA MASAHIRO;KOBAYASHI TAKESHI;MORI TATSUO;FUSEGAWA IZUMI;OHTA TOMOHIKO |
发明人 |
SAKURADA MASAHIRO;KOBAYASHI TAKESHI;MORI TATSUO;FUSEGAWA IZUMI;OHTA TOMOHIKO |
分类号 |
C30B29/06;C30B15/00;C30B15/14;H01L21/208;H01L21/66;(IPC1-7):C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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