发明名称 Contact spring configuration for contacting a semiconductor wafer and method for producing a contact spring configuration
摘要 A contact spring configuration for contacting semiconductor wafers is provided. At least one strip-type contact spring is provided on a substrate. The contact spring is fixed to a surface of the substrate on one side and is composed of a semiconductor material having a stress gradient which causes a permanent bending of the contact spring. The stress gradient in the semiconductor material is brought about by two semiconductor layers which are connected to one another and are mechanically strained differently. The different strains can be set by different doping or by deposition temperatures of different magnitude during the deposition of the semiconductor layers. The contact springs provide a good ohmic contact in particular with contact regions of a semiconductor wafer that are composed of a semiconductor material.
申请公布号 US2003117158(A1) 申请公布日期 2003.06.26
申请号 US20020324874 申请日期 2002.12.20
申请人 GOLDBACH MATTHIAS;BIRNER ALBERT;FRANOSCH MARTIN 发明人 GOLDBACH MATTHIAS;BIRNER ALBERT;FRANOSCH MARTIN
分类号 G01R1/067;G01R1/073;(IPC1-7):G01R31/02 主分类号 G01R1/067
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