| 摘要 |
PURPOSE: To provide a method for manufacturing a semiconductor device, wherein degradation of transistor characteristics is prevented by preventing an injected channel stop layer to be formed in an active region. CONSTITUTION: A resists mask RM12 is formed so that the part above the region, wherein a PMOS transistor is to be formed, becomes an opening. Then a channel stop is injected with energy such that it passes through a partial isolation oxide film PT11 to form a peak of an impurity profile within an SOI layer 3, and a channel stop layer N1 is formed within the SOI layer 3 under the partial isolation oxide film PT11, i.e., in a separated region. Here, the injected impurity is an N-type impurity, and when phosphorus is used, the injection energy thereof is, e.g. 60-120 keV, and the concentration for the channel stop layer N1 is set at 1x10¬17-1x10¬19/cm¬3. At that time, the impurity for channel stop injection is not stopped inside the SOI layer 3, which corresponds to the active region AR.
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