| 摘要 |
PURPOSE: A method for fabricating a test pattern of a semiconductor device is provided to form a test pattern capable of electrically inspecting a charge collection phenomenon caused by plasma by visually and electrically inspecting a corrosion degree of tungsten in a range that electrolyte has a hydrogen ion concentration value of 4-10. CONSTITUTION: An interlayer oxide layer(15) having a via hole is formed on an underlying structure(11) including the first metal interconnection(13). The via hole is filled with a plug(23). The second metal interconnection is formed on the plug and the interlayer oxide layer adjacent to the plug, wherein a part of the plug is exposed. The abovementioned structure is soaked in electrolyte having a hydrogen ion concentration value in a range that the plug is corroded, so that a charge collection phenomenon caused by plasma is inspected according to the corrosion of the plug.
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